tm 1 www.fairchildsemi.com ?2007 fairchild semiconductor corporation FFP08S60S rev. b FFP08S60S 8 a, 600 v, stealth? ii diode FFP08S60S features ? stealth recovery t rr = 30 ns (@ i f = 8 a) ? max forward voltage, v f = 2.6 v (@ t c = 25c) ? 600v reverse voltage and high reliability applications ? general purpose ? switching mode power supply ? ? power switching circuits 8 a, 600 v, s tealth? ii diode the FFP08S60S is a stealth? ii diode with soft recovery c haracteristics. it is silic on nitride pass ivated ion-implanted epitaxial planar construction. this dev ice is intended for use as freewheeling of boos t diode in switching power supplies and other power swithching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switc hing circuits reducing power loss in the switching transistors. pin assignments absolute maximum ratings thermal characteristics package marking and ordering 1. cathode 2. anode to-220-2l 1 1. cathode 2. anode 2 symbol parameter value unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 115 c8a i fsm non-repetitive peak surge current 60hz single half-sine wave 80 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 2.5 c/w device marking device package reel size tape width quantity f08s60s FFP08S60Stu to-220-2l - - 50 t c = 25c unless otherwise noted information january 2007 ? avalanche energy rated ? rohs compliant boost diode in continuous mode power factor corrections
2 www.fairchildsemi.com FFP08S60S 8 a, 600 v, stealth? ii diode electrical characteristics t c = 25c unless otherwise noted notes: 1. pulse : test pulse width = 300 s , duty cycle = 2% test circuit and waveforms parameter conditions min. typ. max unit v f 1 i f = 8 a i f = 8 a t c = 25 c t c = 125 c - - 2.1 1.6 2.6 - v v i r 1 v r = 600 v v r = 600 v t c = 25 c t c = 125 c - - - - 100 500 a a t rr i f =1 a, di/dt = 100 a/s, v r = 30 v t c = 25 c- - 25 ns trr irr s factor q rr i f =8 a, di/dt = 200 a/s, v r = 390 v t c = 25 c- - - - 19 2.2 0.6 21 30 - - - ns a nc trr irr s factor q rr i f =8 a, di/dt = 200 a/s, v r = 390 v t c = 125 c- - - - 58 4.3 1.3 125 - - - - ns a nc w avl avalanche energy (l = 40 mh) 20 - - mj ?2007 fair child se mi conductor corporation FFP08S60S rev . b
3 www.fairchildsemi.com FFP08S60S 8 a, 600 v, stealth? ii diode typical performance characteristics t c = 25c unless otherwise noted figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.1 1 10 100 t c =75 o c t c =25 o c fprward current, i f [a] forward voltage, v f [v] t c =125 o c 0 100 200 300 400 500 600 1e-9 1e-8 1e-7 1e-6 1e-5 1e-4 t c = 25 o c t c = 75 o c reverse current, i r [a] reverse voltage, v r [v] t c = 125 o c 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 junction capacitance, c j [pf] reverse voltage, v r [v] f = 1mhz 100 200 300 400 500 0 10 20 30 40 50 60 70 80 90 100 t c = 125 o c t c = 75 o c reverse r ecovery time, trr [ns] di/dt [a/ s] t c = 25 o c i f = 8a 100 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 t c = 25 o c t c = 75 o c reverse recovery current, irr [a] di/dt [a/ s] t c = 125 o c i f =8a 100 110 120 130 140 150 0 1 2 3 4 5 6 7 8 9 10 11 12 average forward current, i f(av) [a] case temperature, t c [ o c] dc ?200 7 fairchild semiconductor corporation FFP08S60S rev . b
4 www.fairchildsemi.com FFP08S60S 8 a, 600 v, stealth? ii diode mechanical dimensions dimensions in millimeters to-220-2l ?2007 fair child semi conductor corporation FFP08S60S re v. b
FFP08S60S 8 a, 600 v, stealth? ii diode ?2007 fair child se miconductor corporation FFP08S60S rev. b 5 www.fairchildsemi.com
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